Finishing
by Electrochemical Mechanical Polishing (ECMP)
Surfaces of hard, brittle, and difficult-to-machine conductive materials are softened through anodization, and the modified layer is removed by soft and fixed abrasive particles, causing no damage.
High-efficiency surface modification using anodization.
Since it is slurry-less and uses neutral electrolytes, the cost is low.
In comparison with the existing CMP , the device is simple.
Semiconducting materials, such as SiC and GaN, and hard alloys including tungsten carbide (WC), can be polished.
4H-SiC (0001)
Hardness before and after anodic oxidation
Diamond abrasive lapped surface
ECMP polished surface (10 min)
